Current Sharing in Trench MOSFETs During Fast Switching Transients
Student Contest:
Yes
Affiliation Type:
Academia
Keywords:
Current sharing, Field plate, Distributed effects, TLP, Test structure, MOSFET, Split-gate, Simulations, SPICE
Abstract:
Minimizing the on-resistance (RDSon) of power MOSFETs often reduces their ruggedness, i.e. the ability to withstand extraordinary electrical stress events. In this work, we investigate current sharing between trench blocks of different lengths in split-gate trench (SGT) MOSFETs during fast switching transients. We use novel test structures on a Transmission Line Pulse (TLP) setup to measure current sharing and then calibrate a distributed SPICE model for chip-scale electro-thermal simulations. Using this model, we demonstrate how different doping profiles impact current sharing between trench blocks inside the MOSFET, affecting the trade-off between the RDSon and (fast transient) ruggedness.
Track ID:
2
Track Name:
Low Voltage Devices & Power IC Device Technology (LVT)
