Performance of Superjunction SiC devices Session
Session Type: Lecture
Session Code: SiC-1
Location: Lecture Room
Date & Time: Monday June 02, 2025 (14:00 - 15:40)
Chair: Ulrike Grossner,
Noriyuki Iwamuro

 

    Papers are listed in the order they will be presented.

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My Sched		Paper
Id		TopicTitle/Author
5313 5 Avalanche and Short Circuit Withstand Capabilities in 3.3 kV-Class SiC Superjunction MOSFET
Shinichiro Matsunaga, Takeshi Tawara, Syunki Narita, Masakazu Baba, Kensuke Takenaka, Tadao Morimoto, Shinsuke Harada
5321 5 Bipolar Characteristics of 3.3kV-Class 4H-SiC Epi-Refilled Super-Junction Diodes
Haoyuan Cheng, Hengyu Wang, Chi Zhang, Jiangbin Wan, Qianqian Que, Han Wang, Haoyu Wang, Ce Wang, Jingrui Han, Hungki...
5326 5 Comparative Study on Charge-Imbalance Super Junction Termination for 3kV 4H-SiC Full-SJ and Semi-SJ Devices
Chi Zhang, Hengyu Wang, Haoyuan Cheng, Jiangbin Wan, Han Wang, Haoyu Wang, Ce Wang, Zijian Hu, Jingrui Han, Hungkit T...
5310 5 Investigation of Static and Dynamic Behavior of Silicon Carbide Semi-Super-Junction Structure in Schottky Barrier Diodes
Hiroshi Kono, Katsuhisa Tanaka, Tsutomu Kiyosawa, Kenya Sano
5081 5 Comparative Study of Different Layouts for 1.7kV Charge-Balance-Assisted SiC MOSFETs
Yuhan Duan, Botao Sun, Yuanlan Zhang, Pan Liu, Guangyin Lei, Min Li, Qingchun Jon Zhang