Design Approaches and Physics for Reliability and Performance of SiC Devices Session
Session Type: Lecture
Session Code: SiC-2
Location: Lecture Room
Date & Time: Wednesday June 04, 2025 (10:50 - 12:30)
Chair: Kung-Yen Lee,
Shinsuke Harada

 

    Papers are listed in the order they will be presented.

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My Sched		Paper
Id		TopicTitle/Author
5006 5 Impact of Insulating Layer Design in the Termination Region of SiC Devices on H³TRB Test
Kohei Ebihara, Hiroki Niwa, Yosuke Nakata, Toshikazu Tanioka, Takeshi Murakami, Katsuhiro Fujiyoshi, Shigeru Okimoto,...
5052 5 1 cm² Chip Size, 10 kV Rated 4H-SiC MOSFETs with Efficient Termination Design and State-of-the-Art Device Performance
Lingxu Kong, Sizhe Chen, Na Ren, Manyi Ji, Ce Wang, Yanjun Li, Hongyi Xu, Zheng Liu, Xiuyan Lin, Xueqian Zhong, Wei C...
5226 5 Plasma Behavior of SiC MOSFETs with Engineered Substrates During Reverse Recovery
Mohamed Alaluss, Madhu Lakshman Mysore, Clemens Herrmann, Sudhanshu Goel, Ahmed Elsayed, Thomas Basler
5227 5 Dead Time Dependency of Bipolar Degradation in SiC MOSFETs
Clemens Herrmann, Mengdi He, Mohamed Alaluss, Thomas Basler, Larissa Wehrhahn-Kilian, Rudolf Elpelt
5216 5 Investigation of Optimum Gate Structures for 1.2-kV SiC MOSFETs by Analyzing Avalanche and Short-Circuit Withstanding Capabilities
Kazuhiro Suzuki, Hiroshi Yano, Noriyuki Iwamuro