Novel Devices and Ruggedness of SiC Session
Session Type: Lecture
Session Code: SiC-3
Location: Lecture Room
Date & Time: Thursday June 05, 2025 (10:50 - 12:30)
Chair: Cheng-Tyng Yen,
Takaaki Tominaga

 

    Papers are listed in the order they will be presented.

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My Sched		Paper
Id		TopicTitle/Author
5206 5 First Demonstration of SiC MOSFET with Monolithically Integrated Short-Circuit Protection
Shinichi Kimoto, Tatsunori Sakano, Ryosuke Iijima, Mitsuo Okamoto
5085 5 Monolithic SiC Smart Power IC with Over-Temperature Protection
Mitsuo Okamoto, Atsushi Yao, Hiroshi Sato
5170 5 Experimental Demonstration and Analysis of 4.5kV Bidirectional Superjunction Power DMOSFETs in 4H-SiC
Zhaowen He, Reza Ghandi, Collin Hitchcock, Stacey Kennerly, Paul Chow
5329 5 Impact of Bottom p-Well Grounding Resistance on Unclamped Inductive Switching Ruggedness of SiC Trench MOSFETs
Katsuhisa Tanaka, Yuji Kusumoto, Hideyuki Hasegawa, Hiroshi Kono, Kenya Sano
5182 5 The Accurate AC BTI Prediction of SiC Power MOSFETs by Comprehensive Understanding of Physical Mechanism Basic Vth Instability Phenomena
Tetsuya Yoshida, Katsumi Eikyu, Keiichi Maekawa, Hideki Aono, Tsunenobu Kimoto