Gallium Oxide and Diamond Devices Session
Session Type: Lecture
Session Code: SiC-4
Location: Lecture Room
Date & Time: Wednesday June 04, 2025 (08:40 - 10:20)
Chair: Peter Losse,
Hiroshi Kono

 

    Papers are listed in the order they will be presented.

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My Sched		Paper
Id		TopicTitle/Author
5007 5 3 kV/2.9 mΩ·cm² β-Ga₂O₃ Vertical p–n Heterojunction Diodes with Helium-Implanted Edge Termination and Oxygen Post Annealing
Jiajun Han, Na Sun, Xinyi Pei, Kangkai Fan, Yu Xu, Zihao Huang, Renqiang Zhu, Nengjie Huo, Jingbo Li, Junfa Mao, Jian...
5086 5 3.9 kV Vertical β-Ga₂O₃ Hetero-Junction Diode with High-Temperature Operational Capability
Jiangbin Wan, Hengyu Wang, Haoyuan Cheng, Chi Zhang, Ce Wang, Tiancheng Tao, Zijian Hu, Junze Li, Han Wang, Haoyu Wan...
5265 5 Enhancing Continuous Switching Stability of β-Ga₂O₃ SBDs Through Epitaxial Surface Condition and Edge Termination Optimizations
Haoran Wang, Chi-Rui Hwang, Po-Yen Huang, Yeke Liu, Shawn S. H. Hsu, Roy K.-Y. Wong
5240 5 1844 V β-Ga₂O₃ Trench-MOS Schottky Barrier Diodes with Improved Electric Field of 5.2 MV/cm²
Akio Takatsuka, Hironobu Miyamoto, Tsunetoshi Maehara, Yosuke Fujiwara, Kohei Sasaki, Akito Kuramara
5242 5 Over 1kV Deep Depletion Diamond MOSFET
Damien Michez, Juliette Letellier, Julien Pernot, Ralph Makhoul, Nicolas Rouger