Gallium Oxide Devices Session
Session Type: Poster
Session Code: SiC-P2
Location: Poster 4
Date & Time: Wednesday June 04, 2025 (16:10 - 18:00)
Chair: Hiroshi Kono,
Yuichi Onozawa

 

   

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Id		TopicTitle/Author
5045 5 Enhancing the Performance and Reliability of Large-Area β-Ga₂O₃ Schottky Barrier Diodes via Two-Step Oxygen Annealing
Jinyang Liu, Yuanjie Ding, Qiuyan Li, Shu Yang, Zheyang Zheng, Guangwei Xu, Shibing Long
5047 5 Kilovolt-Class β-Ga₂O₃ Multi-Fin-Channel Diodes with Ohmic-Contact Anode
Gaofu Guo, Xiaodong Zhang, Chunhong Zeng, Tiwei Chen, Dengrui Zhao, Zhili Zou, Zhucheng Li, Li Zhang, Zhongming Zeng,...
5048 5 Investigation of β-Ga₂O₃ Power Diodes with Failure Voltage of 300 V Under LET of 82 MeV·cm²/mg
Song He, Jinyang Liu, Guangwei Xu, Weibing Hao, Tianqi Wang, Xuanze Zhou, Shu Yang, Shibing Long
5050 5 Over 3 kV Vertical Mo/β-Ga₂O₃ Trench-HJBS Diode with Low Turn-on Voltage of 0.66 V
Qiuyan Li, Jinyang Liu, Zhao Han, Weibing Hao, Guangwei Xu, Shibing Long
5055 5 Monolithic Integrated β-Ga₂O₃ Inverters Based on Charge Trapping Layer E-Mode MOSFETs
Mujun Li, Xiaohui Wang, Yang Jiang, Fangzhou Du, Haozhe Yu, Qing Wang, Hongyu Yu
5066 5 Degradation Mechanisms of β-Ga₂O₃ SBD Associated with Proton Irradiation-Induced Defects
Wenzhang Du, Yuangang Wang, Junfeng Yu, Junyan Zhu, Xinbo Zou, Liang Li, Debin Zhang, Yiwu Qiu, Xinjie Zhou, Tao Wang...
5082 5 Comparative Study on Transient Thermal Resistance for β-Ga₂O₃ SBDs with Junction-Side Cooling Implementation
Shuhei Fukunaga, Tsuyoshi Funaki, Jun Arima, Minoru Fujita, Jun Hirabayashi
5143 5 Self-Aligned Gate Technology for N-Ion-Implanted β-Ga₂O₃ UMOSFET
Xuanze Zhou, Qi Liu, Guangwei Xu, Shibing Long
5147 5 High-Voltage Ga2O3 Vertical Schottky Barrier Diode with Suspended Field Plate Assisted Shallow Mesa Termination
Desen Chen, Xiaorui Xu, Yicong Deng, Xueli Han, Zhengbo Wang, Duanyang Chen, Hongji Qi, Xiaoqiang Lu, Haizhong Zhang
5185 5 Investigation of Oxygen Vacancies and Reverse Leakage Suppression in High-Breakdown Vertical Ga₂O₃/4H-SiC Schottky Rectifiers
Ji-Hyun Kim, Soo-Young Moon, Geon-Hee Lee, Tae-Hee Lee, Seung-Hyun Park, Sang-Mo Koo
5295 5 Switching Reliability of NiO/Ga₂O₃ Bipolar Junction Evaluated by a Circuit Method
Hehe Gong, Xin Yang, Zineng Yang, Yuan Qin, Jiandong Ye, Yuhao Zhang
5336 5 Monolithic Integration of Enhancement- and Depletion-Mode MOSFETs Based on Heteroepitaxial ε-Ga2O3 for Power ICs
Shengheng Zhu, Linxuan Li, Tiecheng Luo, Weiqu Chen, Chenhong Huang, Xifu Chen, Zimin Chen, Yanli Pei, Gang Wang, Xin...
5256 5 Reliability of β-Ga₂O₃ Schottky Barrier Diodes with a High Breakdown Voltage of 2.97 kV at 473 K
Guangwei Xu, Weibing Hao, Shibing Long