SiC Devices Session
Session Type: Poster
Session Code: SiC-P1
Location: Poster 3
Date & Time: Wednesday June 04, 2025 (16:10 - 18:00)
Chair: Hiroshi Kono,
Yuichi Onozawa

 

   

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Id		TopicTitle/Author
5034 5 Study on Differences in Single-Event Leakage Current of Planar-Gate and Asymmetric Trench-Gate SiC MOSFETs
Xiaoping Dong, Mingmin Huang, Yao Ma, Zhimei Yang, Yun Li, Min Gong
5077 5 Impact of Bulk Defects on Reliability and Noise in 1200V SiC DMOSFETs
Huamao Chen, Yu-Ting Chen, Shih-Chiang Shen, Chih-Hung Yen, Ju-Cheng Lin, Chih-Ming Lai
5084 5 Short Circuit Protection of Parallel SiC MOSFET Modules Based on Electro-Thermal Design with High-Temperature I-V Characteristics
Makiko Hirano, Kazuya Kodani, Akihisa Matsushita, Atsuhiko Kuzumaki
5090 5 Study of a Novel Hybrid Design with an IGBT and a SiC-MOSFET in a Fast-Switching ANPC Topology
Alexander Philippou, Thorsten Arnold, Martin Weidl, Max Falkowski, Franz-Josef Niedernostheide
5091 5 Analysis on BVDSS Outlier Chips and Screening Technology for 1.2 kV Automotive SiC MOSFETs
Jinying Yu, Jingjing Cui, Bao Hu, Jie Deng, Baocheng Yuan
5102 5 Influence of Substrate and Epi Buffer on SiC Bipolar Degradation for Different Voltage Classes at High Current Levels
Larissa Wehrhahn-Kilian, Paul Salmen, Michael Brambach
5110 5 Impact of the SiC MOSFET Body Diode in Heavy Ion-Induced Single-Event Damage
Leshan Qiu, Yun Bai, Jiale Wang, Yan Chen, Jieqin Ding, Chengzhan Li, Xinyu Liu
5122 5 A Physics-Based Fast Electro-Thermal Coupling Model for Wide-Temperature-Range Junction Temperature Assessment in SiC MOSFETs
Cheng Zhang, Wenyu Lu, Xuetong Zhou, Xinhong Cheng, Li Zheng
5133 5 An Analysis of UIS Failure Mechanism of 4H-SiC MOSFET in Transition Region
Yan Chen, Yun Bai, Chengzhan Li, Antao Wang, Leshan Qiu, Xiaoli Tian, Yidang Tang, Xinhua Wang, Xinyu Liu
5140 5 Outperformance of Asymmetric 4H-SiC Superjunction Geometry Beyond the Optimal Limit of Symmetric Design
Daisuke Iizasa, Hiroaki Shiraga, Seigo Mori, Yuki Nakano
5151 5 Impact of VTH Instability in SiC for Solid-State Circuit Breaker Application
Enea Bianda, Gioele Gregis, Elena Mengotti, Gerd Schlottig, Luca Raciti, Thomas Masper
5152 5 Measurement of Free-Carrier Density in a 1.2 kV SiC Schottky Diode Under Overstress Conditions
Ferran Bonet, Oriol Aviñó, Xavier Jordà, Xavier Perpiñá
5181 5 Demonstration of 1100 V 600 A/cm² 4H-SiC Lateral IGBT with Field Limiting Rings Termination Design
Mengyao Zhao, Jie Ma, Tianchun Nie, Qiwei Peng, Haowei Chen, Runhua Huang, Yu Huang, Song Bai, Jiaxing Wei, Siyang Li...
5184 5 A Study on Fault Prediction and Redundancy Control of Parallel SiC-MOSFETs
Naoki Takagi, Akira Tamakoshi, Takahiro Hanyu, Yoshitaka Iwaji, Tetsuo Endoh, Yoshikazu Takahashi
5213 5 Dynamic Transconductance Extraction Method and Application in Medium-Voltage SiC Module
Jie Ren, Menghao Li, Sideng Hu, Naoto Fujishima, Haruhiko Nishio
5246 5 Negative Gate Bias Induced Vth Instability in SiC MOSFET: Role of Body Diode Conduction
Peixuan Wang, Yunhong Lao, Meng Zhang, Youyi Yin, Hao Chang, Hengyuan Qi, Michael Lee, Jack Chen, Tony Chau, Jin Wei
5248 5 The Latest Fabrication and Experimental Results of 1.2 kV Split-Gate 4H-SiC MOSFET with P+ Buffer
Yuzhi Chen, Chi Li, Zedong Zheng
5253 5 Monolithic Integration of Lateral 4H-SiC MOSFET and Insulated-Gate Resistive Load with Improved Linearity and High-Temperature Stability
Cheng Sung, Pin-Shiuan Kuo, Yu-Sheng Hsiao, Wei-Cheng Lin, Surya Elangovan, Chia-Lung Hung, Yi-Kai Hsiao, Hao-Chung K...
5261 5 Investigation of Termination Soft Breakdown Mechanisms in 1700V-SiC MOSFETs Under HTRB with Different Temperatures
Wei-Chieh Hung, Hung-Ming Kuo, Ting-Chang Chang, Po-Yu Yen, Chun-Hung Chiang, Bo-Yu Chen
5279 5 Application-Relevant Measurement of the Input Capacitance of SiC Power MOSFETs
Michel Nagel, Anja K. Brandl, Manuel Belanche, Ivana Kovacevic-Badstübner, Ulrike Grossner
5282 5 Effects of Proton Irradiation on SiC Power Devices with Various Edge Termination Structures
Sangyeob Kim, Jeongtae Kim, Dong-Seok Kim, Hyuncheol Bae, Gyuhyeok Kang, Ogyun Seok
5286 5 Data-Driven Multi-Objective Optimization of SiC Power MOSFETs
Anja Katerina Brandl, Ivana Kovacevic-Badstübner, Bhagyalakshmi Kakarla, Roland Niemeier, Ulrike Grossner
5327 5 Reliability Testing of SiC MOSFETs in Different Power Cycling Operating Modes - Focusing on the Challenges of Body Diode Testing
Lukas Hein, Patrick Heimler, Georg Schubert, Josef Lutz, Thomas Basler
5333 5 An In-Depth Investigation of Gate Ringing Induced by Total Ionizing Dose in SiC MOSFETs
Jiahao Hu, Xiaochuan Deng, Yinglun Wang, Tao Xu, Xuan Li, Bo Zhang
5354 5 Optimisation of the Fabrication of Sidewall-Implanted Trenches in a 3.3 kV SiC Semi-Superjunction Schottky Barrier Diode
Arne Benjamin Renz, Kyrylo Melnyk, Nikolaos Iosifidis, Richard Jefferies, Marco Zignale, Patrick Fiorenza, Luca Mares...
5362 5 Novel 1.2kV 4H-SiC Deep P-Well One-Channel MOSFET with Asymmetric Channel Design
Skylar deBoer, Seung Yup Jang, Adam Morgan, Woongje Sung
5364 5 Comparative Analysis Between Monolithically Integrated 1.2kV Bi-Directional MOSFETs and Bi-Directional JBSFETs
Stephen Mancini, Daixin Chen, Seung Yup Jang, Andrew Binder, Richard Floyd, Robert Kaplar, Jack Flicker, Stan Atcitty...
5367 5 Comparative Performance Evaluation and Analysis of High Voltage Superjunction, Charge-Balanced, and Conventional 4H-SiC DMOSFETs at Cryogenic and High Temperatures
Zhaowen He, Reza Ghandi, Collin Hitchcock, Stacey Kennerly, Paul Chow
5374 5 Investigations on SiC LIGBT with Floating Field-Limiting Rings and Injection Enhancement Effect
Moufu Kong, Hongfei Deng, Mingliang Yang, Yingzhi Luo, Zhaoyu Ai, Bingke Zhang
5378 5 Capacitance Degradation of SiC MOSFETs Under Dynamic Reverse Bias Stress: Displacement Current-Induced Charge Injection and JFET Design Optimization
Zhaoxiang Wei, Zhaokuan Liu, Guozhi Zhen, Junhou Cao, Hao Fu, Jiaxing Wei, Siyang Liu, Weifeng Sun