Vertical GaN Devices Session
Session Type: Poster
Session Code: GaN-P2
Location: Poster 4
Date & Time: Tuesday June 03, 2025 (16:10 - 18:00)
Chair: Yasuhiro Uemoto,
Yuichi Onozawa

 

   

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My Sched		Paper
Id		TopicTitle/Author
5013 4 Enhancing Key Performance of Vertical p-NiO/n-GaN Heterojunction Diodes Through Plasma Treatment and Oxygen Post-Annealing
Yeying Huang, Min Wang, Na Sun, Renqiang Zhu, Xiaohua Li, Jianbo Liang, Jiandong Ye, Chunfu Zhang, Hezhou Liu, Junfa ...
5015 4 Enhancing Key Performance of Vertical GaN MOS Capacitors Through GaOx Interface Technology
Jinpei Lin, Xinyi Pei, Xiaohua Li, Haiwen Liu, Renqiang Zhu, Chunfu Zhang, Hsien-Chin Chiu, Jianbo Liang, Hezhou Liu,...
5164 4 Analysis of Acceptor Activation and Lateral Diffusion of Channeled-Implanted Mg Atoms in Vertical GaN Junction Barrier Schottky Diodes
Kazuki Kitagawa, Tsutomu Uesugi, Masahiro Horita, Tetsu Kachi, Jun Suda
5202 4 1500 V GaN-on-Si Vertical Power MOSFETs: From Quasi-Vertical to Fully-Vertical Topology
Yuchuan Ma, Hang Chen, Shuhui Zhang, Xiangyu Teng, Xiaoping Meng, Huantao Duan, Bin Hu, Huimei Ma, Jianfei Shen, Ming...
5263 4 Low On-Resistance Vertical GaN-on-GaN Trench MIS-FET with Small Temperature Dependence
Zaitian Han, Hao Zhang, Shibing Long, Shu Yang
5075 4 High-Gain/Low-Vf GaN Bipolar Junction Transistor Based on Heterogeneous Integration Process for Bandgap Reference Application
Yukai Huang, Junfeng Yu, Junyan Zhu, Xiaodong Yang, Wenzhang Du, Jiao Liang, Ruihan Gao, Chunlei Wu, Hongping Ma, Qin...