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GaN Devices Session Session Type:  Poster Session Code:  GaN-P1 Location:  Poster 3 Date & Time:  Tuesday June 03, 2025 (16:10 - 18:00) Chair:  Yasuhiro Uemoto, Yuichi Onozawa       Add To My Sched Paper Id Topic Title/Author 5024 4 Dynamic Performance Analysis of GaN Digital Logic Gate Circuits for MHz-Level Operation via CTL-Based ICs Platform Yang Jiang, Fangzhou Du, Ziyang Wang, Kangyao Wen, Mujun Li, Yifan Cui, Han Wang, Qing Wang, Hongyu Yu 5025 4 A Comprehensive Study on Device Reliability and Failure Mechanism of 650V p-GaN Gate HEMTs Under Long-Term HTRB Stress Beyond 150 ℃ Lei Tang, Jinggui Zhou, Binju Qiu, Huan Gao, Jianggen Zhu, Kuangli Chen, Ning Yang, Bo Zhang, Qi Zhou 5038 4 Dependence of UIS Capability in GaN HEMTs on Substrate Bias and p-Gate Contacts Wataru Saito, Shin-Ichi Nishizawa 5040 4 Self-Aligned p-GaN Gate Controlled Diodes with Tunable Forward Conduction/Reverse Blocking Properties for High Efficiency Buck Converter Jinggui Zhou, Shuting Huang, Jianggen Zhu, Yuqi Liu, Enchuan Duan, Lei Tang, Wenzheng Liu, Xuan Li, Peng Luo, Yong Li... 5049 4 Impact of Substrate Termination on the Performances of Monolithic ESD Protection Circuit Using Bidirectional GaN HEMTs Yanfeng Ma, Sheng Li, Hao Yan, Lixi Wang, Mingfei Li, Weihao Lu, Jie Ma, Ran Ye, Denggui Wang, Jianjun Zhou, Wangran ... 5056 4 High-Vth E-Mode PIN-Gate GaN HEMT : Supporting Gate Drive Voltages >12 V Mao Jia, Bin Hou, Ling Yang, Xuefeng Zheng, Xiaohua Ma, Yue Hao 5071 4 Monolithic Heterogeneous Integration of 6-Inch GaN/Si CMOS 1P2M Process on Si (111) Substrate and Platformed Devices Wenzhang Du, Hanzhao He, Xiaojun Fu, Wenqi Fan, Junyan Zhu, Junfeng Yu, Xiaodong Yang, Haonan Liu, Zhuang Wang, Ruiha... 5072 4 Enhanced Irradiation Capability in AlGaN/GaN P-GaN-Hybrid Anode Power Diodes via Structural Hardening Design Feng Zhou, Tianyang Zhou, Tianqi Wang, Peipei Hu, Pengfei Zhai, Jie Liu, Zhichao Wei, Yuanyang Xia, Leke Wu, Ke Wang,... 5078 4 Physical Model of Trapping-Induced Dynamic Degradation in GaN HEMT Chih-Kai Chang, Chao-Ta Fan, Pao-Tin Lin, Yen-Chieh Huang, Po-Chin Peng, Cheng Chun Huang, Ming-Cheng Lin 5080 4 Experiment and Simulation Study of Single-Event Burnout in GaN Event-Triggering HEMTs Ruize Sun, Renjie Wu, Xiaoming Wang, Yun Xia, Chao Liu, Wanjun Chen, Bo Zhang 5099 4 Comparison of Total Ionizing Dose Effects in GaN HEMTs with p-GaN Gate Structure and Cascode Configuration Chen-Yu Yang, Der-Sheng Chao, Jenq-Horng Liang 5145 4 Reverse Recovery Loss in Monolithic GaN Half-Bridge Chip with P-N Junction Isolation Mingfei Li, Sheng Li, Fenglei Song, Yanfeng Ma, Weihao Lu, Jianjun Zhou, Denggui Wang, Jie Ma, Ran Ye, Jiaxing Wei, L... 5160 4 Heavy-Ion Radiation-Induced Dynamic On-Resistance Degradation for P-GaN Gate HEMTs Huan Gao, Xin Zhou, Zhao Wang, Wen Yang, Qi Zhou, Bo Zhang 5176 4 Suppressed Substrate-Coupled Cross-Talk Effects in GaN-on-Sapphire Platform Under High-Temperature and High-Voltage Applications Junsong Jiang, Bomin Jiang, Zhanfei Han, Yang Zhang, Mengdie Zhang, Xingang Ren, Xi Tang, Xiangdong Li, Shu Yang, Jin... 5194 4 On the Rational Extraction of the Channel Mobility of Schottky-Type p-GaN Gate Power HEMTs Chi Wang, Zhisheng Nie, Hao Zhang, Yifang Zhang, Li Zhang, Mengyuan Hua, Shibing Long, Zheyang Zheng 5205 4 A P-Channel GaN Insulated Gate Bipolar Transistor with Outstanding Current Capability Mengyao Zhao, Jie Ma, Tianchun Nie, Qiwei Peng, Denggui Wang, Jianjun Zhou, Sheng Li, Jiaxing Wei, Siyang Liu, Long Z... 5233 4 Engineering Extrinsic Resistance of E-Mode GaN p-FET Towards Enhanced Current Density Jialin Duan, Jingjing Yu, Teng Li, Hengyuan Qi, Sihang Liu, Yunhong Lao, Maojun Wang, Junchun Bai, Bin Cheng, Jinyan ... 5241 4 Improved Normally-Off 1200 V GaN-on-Si MOS-HEMT with Novel AlGaN Back Barrier Cédric Masante, Stéphane Bécu, Blend Mohamad, Aurélien Olivier, Florent Gréco, Rémi Riat, Simona Torrengo, Johny Amir... 5243 4 Investigation of Dynamic RON in p-GaN Gate HEMTs Under Steady-State Soft-Switching: Roles of OFF-State Trapping and Hole Injections Hongkeng Zhu, Elison Matioli 5244 4 Demonstration of 3300-V GaN HEMTs on 6-Inch Sapphire for Medium-Voltage Aplications: A Cost-Effective and High-Performance Solution Junbo Wang, Xiangdong Li, Jian Ji, Lili Zhai, Lu Yu, Zhanfei Han, Tao Zhang, Xi Jiang, Song Yuan, Long Chen, Lezi Wan... 5247 4 Dynamic Threshold Voltage Extraction for GaN HEMT via a Source-Series-Connected Capacitor Wenkang Ji, Ying Wang, Zhixing Zhao, Zilin Wu, Haifeng Zhan, Lekang Fan, Zesen Chen, Zhuoran Luo, Tian Luo, Qianshu W... 5257 4 A > 10 kV/2.1 GW/cm² AlGaN/GaN SBD with Current-Collapse Suppression via In-Situ NH3 Plasma Treated GaN Passivation Jiahao Chen, Ruowei Liu, Tao Zhang, Shengrui Xu, Huake Su, Jinfeng Zhang, Zeyang Ren, Xiangdong Li, Hongchang Tao, Yu... 5259 4 Realization of High-Voltage Depletion-Mode HEMTs with Tunable Threshold Voltage on a Standard Enhancement-Mode GaN Platform Fengping Lin, Xiaoyu Liu, Zhiwen Dong, Junsong Jiang, Suxia Guo, Changhui Zhao, Zhaofu Zhang, Baikui Li, Gaofei Tang,... 5264 4 Dynamic On-Resistance Degradation in E-Mode GaN HEMTs Under Over-Voltage Hard Switching Stress: Insight of Physical Space and Energy Levels Haoran Wang, Po-Yen Huang, Wei-Ting Hsu, Shawn S. H. Hsu, Roy K.-Y. Wong 5267 4 High-Performance InAlN/GaN HEMTs and Monolithically Integrated Inverters Enabled by InAlOxN1-x Plasma-Induced-Oxidation Charge Trapping Layer Fangzhou Du, Yang Jiang, Ziyang Wang, Kangyao Wen, Mujun Li, Xiaohui Wang, Yi Zhang, Chenkai Deng, Qing Wang, Hongyu ... 5272 4 Dynamic Overvoltage and Energy Loss in p-GaN HEMTs Under Ultraviolet Pulsed Laser-Induced Single Event Irradiation Mai Zhang, Feng Zhou, Yijun Shi, Zhengxiang Tang, Can Zou, Weizong Xu, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zha... 5283 4 Enhanced Single-Event Hardness in GaN-on-Si HEMT with Gate-Junction Termination Extension Xuan Xie, Minze Wang, Ziang Wang, Zhi Wang, Chenyue Chu, Guangwei Xu, Shibing Long, Shu Yang 5296 4 Demonstration of High Voltage (>2000V) AlGaN/GaN Schottky Barrier Diode with p-GaN Anode Edge Termination and Cathode-Connected p-GaN Islands for Enhanced Dynamic RON Stability Hung-Chun Chen, Pei-Jung Wang, Hung-Wei Chen, Tian-Li Wu 5299 4 Through-GaN-Via Design Rule Investigation of GaN Power HEMTs on Si Substrate Longge Deng, Ji Shu, Jiahui Sun, Kevin J. Chen 5302 4 Accurate Dynamic ON-Resistance Characterization of Low-Voltage GaN Power HEMTs Yuwei Wu, Ji Shu, Jiahui Sun, Binghong Wang, Zongjie Zhou, Kevin Chen 5305 4 High Performance p-GaN Gate HEMT with TiNxOy Resistive Field Plate Structure Zhuocheng Wang, Wanjun Chen, Fangzhou Wang, Cheng Yu, Xiaochuan Deng, Ping Yu, Zheyu Huang, Yang Wang, Haiqiang Jia, ... 5314 4 On the Impacts of Mobility Mismatching-Induced Asymmetric Rising and Falling Edges in GaN-Based CMOS Circuits for Prospective Power Integration Yang Zhang, Haoran Tao, Junchen Huang, Xiaomin Wang, Shibing Long, Zheyang Zheng 5318 4 Expanded Gate-Voltage Operating Range of p-GaN Gate HEMTs Operated in Synchronized Photonic-Electronic Driving (SPED) Scheme Longge Deng, Haochen Zhang, Zheng Wu, Yan Cheng, Tao Chen, Kevin J. Chen 5323 4 High ION/IOFF Ratio > 105 Ag-Gated E-Mode GaN p-FETs Enabled by p++-GaN Contact and Polarization-Enhanced AlN Layer Zhiwei Sun, Hao Tian, Weisheng Wang, Xuanming Zhang, Maoqing Ling, Jie Zhang, Yinchao Zhao, Harm van Zalinge, Ivona Z... 5359 4 Surge Current Operation of Power GaN HEMTs with p-GaN Gate Under Positive Gate Voltage Maximilian Goller, Madhu Lakshman Mysore, Dezhi Yang, Mohamed Alaluss, Josef Lutz, Thomas Basler 5368 4 A Highly Linear 2-Transistor Monolithic Temperature Sensor Employing p-GaN HEMTs for GaN Power ICs Fangqing Li, Yifan Dong, Xinyu Sun, Haodong Wang, Xin Chen, Yaozong Zhong, Hongwei Gao, Haoran Qie, Tengfei Li, Gaofe... 5373 4 Dual- vs. Single-Peak Transconductance Evolution in Schottky p-GaN Gate HEMTs: Influence of Partially and Fully Depleted p-GaN Layer Xuan Liu, Chao Feng, Yuhao Wang, Xinyue Dai, Zuoheng Jiang, Keping Wu, Jiawei Chen, Danfeng Mao, Rongxing Du, Xiaopin...

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