Novel GaN Power Device and Technologies 1 Session
Session Type: Lecture
Session Code: GaN-1
Location: Lecture Room
Date & Time: Monday June 02, 2025 (16:10 - 17:50)
Chair: Tom Chun-Lin Tsai,
Akira Nakajima

 

    Papers are listed in the order they will be presented.

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My Sched		Paper
Id		TopicTitle/Author
5294 4 First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Xin Yang, Liyang Jin, Matthew Porter, Hongchang Cui, Zineng Yang, Hehe Gong, Han Wang, Linbo Shao, Yuhao Zhang
5042 4 First Demonstration of a Fully-Vertical GaN Power finFET with Direct Optical Triggering
Jung-Han Hsia, Joshua Andrew Perozek, Joseph Park, Tomás Palacios
5079 4 Enhanced Photon-Generated Hole Spreading in p-GaN Gate Double-Channel HEMT for Suppression of Back-Gating Effect from Si Substrate
Zheng Wu, Tao Chen, Yat Hon Ng, Haochen Zhang, Zongjie Zhou, Yan Cheng, Hang Liao, Yutao Geng, Yumeng Huang, Kevin Ji...
5126 4 Low RONQG 1.2 kV-Class Normally-Off GaN Gate Injection Transistor on GaN Substrate with Asymmetric Gate Structure
Hiroyuki Handa, Naohiro Tsurumi, Masao Kawaguchi, Masahiro Ogawa, Daisuke Shibata, Yoshio Okayama, Satoshi Tamura
5142 4 Beyond 650 V Dynamic Switching of High Voltage AlGaN/GaN/AlN HEMTs on Monocrystalline AlN Substrates
Houssam Halhoul, Mihaela Wolf, Frank Brunner, Sven Besendörfer, Martin Damian Cuallo, Steffen Breuer, Gleb Lukin, And...