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| Novel GaN Power Device and Technologies 1 Session |
| Session Type: | Lecture |
| Session Code: | GaN-1 |
| Location: | Lecture Room |
| Date & Time: | Monday June 02, 2025 (16:10 - 17:50) |
| Chair: | Tom Chun-Lin Tsai,
Akira Nakajima |
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Papers are listed in the order they will be presented.
Paper
Id | Topic | Title/Author |
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| 5294 |
4 |
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Xin Yang, Liyang Jin, Matthew Porter, Hongchang Cui, Zineng Yang, Hehe Gong, Han Wang, Linbo Shao, Yuhao Zhang |
| 5042 |
4 |
First Demonstration of a Fully-Vertical GaN Power finFET with Direct Optical Triggering
Jung-Han Hsia, Joshua Andrew Perozek, Joseph Park, Tomás Palacios |
| 5079 |
4 |
Enhanced Photon-Generated Hole Spreading in p-GaN Gate Double-Channel HEMT for Suppression of Back-Gating Effect from Si Substrate
Zheng Wu, Tao Chen, Yat Hon Ng, Haochen Zhang, Zongjie Zhou, Yan Cheng, Hang Liao, Yutao Geng, Yumeng Huang, Kevin Ji... |
| 5126 |
4 |
Low RONQG 1.2 kV-Class Normally-Off GaN Gate Injection Transistor on GaN Substrate with Asymmetric Gate Structure
Hiroyuki Handa, Naohiro Tsurumi, Masao Kawaguchi, Masahiro Ogawa, Daisuke Shibata, Yoshio Okayama, Satoshi Tamura |
| 5142 |
4 |
Beyond 650 V Dynamic Switching of High Voltage AlGaN/GaN/AlN HEMTs on Monocrystalline AlN Substrates
Houssam Halhoul, Mihaela Wolf, Frank Brunner, Sven Besendörfer, Martin Damian Cuallo, Steffen Breuer, Gleb Lukin, And... |
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