Novel GaN Power Device and Technologies 2 Session
Session Type: Lecture
Session Code: GaN-3
Location: Lecture Room
Date & Time: Thursday June 05, 2025 (14:00 - 15:20)
Chair: Dong Seup Lee,
Hiroyuki Handa

 

    Papers are listed in the order they will be presented.

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My Sched		Paper
Id		TopicTitle/Author
5089 4 A Hybrid-Source Double-Channel p-GaN Gate AlGaN/GaN HEMT Featuring Suppression of Buffer Trapping Effects on Both Forward and Reverse Conductions
Xiaotian Tang, Zhongchen Ji, Qimeng Jiang, Sen Huang, Xinguo Gao, Ke Wei, Xinhua Wang, Xinyu Liu
5278 4 p-GaN Gate HEMT with the Buffer Hole Compensation Layer for Achieving Repetitive Avalanche-Like Breakdown Capability
Cheng Yu, Wanjun Chen, Fangzhou Wang, Zhuocheng Wang, Xiaochuan Deng, Guojian Ding, Zheyu Huang, Yang Wang, Haiqiang ...
5027 4 Vth Adjustable p-Channel GaN FinFET for Complementary Logic Integration
Maolin Pan, Hai Huang, Xin Hu, Yifei Zhao, Yannan Yang, Saisheng Xu, Min Xu
5179 4 GaN/SiC-Based Polarization Superjunction Hybrid HEMTs (PSJ-hyHEMTs) on Vicinal Off-Angle SiC
Akira Nakajima, Hirohisa Hirai, Yoshinao Miura, Kazutoshi Kojima, Tomohisa Kato, Shinsuke Harada