GaN Power Device Reliability and Tests Session
Session Type: Lecture
Session Code: GaN-2
Location: Lecture Room
Date & Time: Tuesday June 03, 2025 (14:00 - 15:20)
Chair: Oliver Hilt,
Roy K.-Y. Wong

 

    Papers are listed in the order they will be presented.

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My Sched		Paper
Id		TopicTitle/Author
5350 4 Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
Yuan Qin, Yijin Guo, Matthew Porter, Ming Xiao, Hehe Gong, Zineng Yang, Daniel Popa, Loizos Efthymiou, Kai Cheng, Zhi...
5315 4 Verification of p-GaN Gate Lifetime Models Through Wide Time-Scale (µs-107 s) Measurement
Sijiang Wu, Siyuan Ye, Jinjin Tang, Junting Chen, Shanshan Wang, Junlei Zhao, Zuoheng Jiang, Haohao Chen, Zheyang Zhe...
5258 4 Ultrafast Junction Temperature Mapping During Surge Current Transient and Thermal Management in Vertical GaN Pin Diode
Jiahong Du, Haobin Lin, Dazhi Hou, Shibing Long, Shu Yang
5281 4 Mechanism of Leakage Current Degradation in p-GaN Gate HEMTs Under Gamma Irradiation
Zhao Wang, Qingchen Jiang, Shenghuai Liu, Xin Zhou, Huan Gao, Qi Zhou, Zhao Qi, Ming Qiao, Bo Zhang