Plenary 1  Chair: TBA

SiC-1: Novel Device Structures in SiC  Chair: Siddarth Sundaresan - Navitas; Ulrike Grossner - ETH;

GaN-1: GaN Power Device Reliability  Chair: Shu Yang - Zhejiang University; Sameh Khalil - Infineon Technologies;

LVT-1: Vertical Low Voltage Devices  Chair: Amit Paul - ON Semiconductor; Tatsuya Nishiwaki - Toshiba Electronic Devices & Storage Corporation;

Plenary 2  Chair: TBA

PK-1: Power Module Design & Development  Chair: Ichiro Omura - Kyushu Institute of Technology; Antonio Pio Catalano - University of Naples;

ICD-1: ICs for Drivers & Protection Circuits  Chair: Makoto Takamiya - The University of Tokyo; John Pigott - NXP Semiconductors;

HV-1: High Voltage Power Devices  Chair: Noriyuki Iwamuro - University of Tsukuba; Yi Tang - StarPower Semiconductor;

GaN-2: Novel GaN Power Devices & Technologies 1  Chair: Roy K.-Y. Wong - Innoscience; Oliver Hilt - Ferdinand Braun Institut;

SiC-2: Ruggedness & Reliability of SiC MOSFETs  Chair: Dethard Peters - Infineon Technologies; Shinsuke Harada - AIST;

GaN-3: Novel GaN Power Devices & Technologies 2  Chair: Hong Zhou - Xidian University; Hideyuki Okita - Panasonic;

SiC-3: Recent Advances in Ga2O3 Devices  Chair: Cheng-Tyng Yen - Fast SiC Semiconductor Inc.; Alexander Bolotnikov - ON Semiconductor;

LVT-2: Lateral Low Voltage Devices  Chair: Xin Lin - NXP Semiconductors; Riccardo Depetro - STMicroelectronics;

Poster-1: GaN  Chair: Oliver Hilt - Ferdinand Braun Institut;

Poster-1: HV  Chair: Shigeto Honda - Mitsubishi Electric Corporation;

Poster-1: ICD  Chair: Xin Ming - University of Electronic Science and Technology of China;

Poster-2: LVT  Chair: Kuo-Ming Wu - Taiwan Semiconductor Manufacturing Company;

Poster-2: SiC  Chair: Chih-Fang Huang - National Tsing Hua University;

Poster-2: PK  Chair: Alberto Castellazzi - Kyoto University of Advanced Scienc;